刘琦，男，复旦大学微电子学院、芯片与系统前沿技术研究院教授，博士生导师。2018年国家杰出青年科学基金获得者。

刘琦，2014年获国家优秀青年科学基金资助，2015年获中国科学院卢嘉锡青年人才奖，2016年获国家自然科学二等奖，2018年获国家杰出青年科学基金资助，2019年获中国科学院青年科学家奖。

2024年12月，荣获2024年度何梁何利基金科学与技术创新奖·青年创新奖。

2007.09-2010.07，安徽大学电子工程信息学院与中国科学院微电子研究所联合培养，博士

2004.09-2007.07，安徽大学电子信息工程学院，硕士

1998.09-2002.07，安徽大学物理系，本科

2016.01-， 中国科学院微电子研究所，中国科学院微电子器件与集成技术重点实验室，研究员

2012.10-2016.01，中国科学院微电子研究所，纳米加工与新器件集成技术实验室，副研究员

2012.8-2012.10，中国科学院微电子研究所纳米加工与新器件集成技术实验室，助理研究员

2010.11-2010.08，中国科学院微电子研究所，博士后

2007.07-2010.10，安徽大学电子信息工程学院，助教

2020年5月至2021年担任复旦大学芯片与系统前沿技术研究院教授。

主要研究方向包括新型非易失存储技术、神经形态器件、类脑计算、存算一体芯片及系统。

主持了国家重点研发计划、国家自然科学基金委杰青、优青和重点等项目等。在Nat. Nano.、Nat. Electron.、Nat. Commun.、Adv. Mater.、Nano Lett.、IEEE EDL等期刊发表SCI论文100多篇，SCI他引6000多次，H因子40，获得授权中国发明专利48项，美国发明专利5项。

曾获得国家自然科学二等奖、电子学会科学技术进步一等奖、中科院青年科学家奖、中科院杰出科技成就奖等奖项。

1.Xumeng Zhang, Ye Zhuo, Qing Luo, Zuheng Wu, Rivu Midya, Zhongrui Wang, Wenhao Song, Rui Wang, Navnidhi K. Upadhyay, Yilin Fang, Fatemeh Kiani, Mingyi Rao, Yang Yang, Qiangfei Xia, Qi Liu*, Ming Liu*, and J. Joshua Yang*, “An artificial spiking afferent nerve based on Mott memristors for neuronrobotics”, Nature Communications, 11, 51, (2020).

2.Luqi Tu#, Rongrong Cao#, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, Tie Lin, Peng Zhou, Xiangjian Meng, Weida Hu*, Qi Liu*, Jianlu Wang*, Ming Liu, and Junhao Chu, “Ultrasensitive negative capacitance phototransistors”, Nature Communications, 11, 101, (2020).

3.Xiaolong Zhao, Jiebin Niu, Yang Yang, Xiangheng Xiao*, Rui Chen, Zuheng Wu, Ying Zhang, Hangbing Lv, Shibing Long*, Qi Liu*, Changzhong Jiang, and Ming Liu, “Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application”, Nanotechnology, 31, 144002, (2020).

4.Guangjian Wu, Bobo Tian, Lan Liu, Wei Lv, Shuang Wu, Xudong Wang, Yan Chen, Jingyu Li, Zhen Wang, Shuaiqin Wu, Hong Shen, Tie Lin, Peng Zhou*, Qi Liu, Chungang Duan, Shantao Zhang, Xiangjian Meng, Shiwei Wu, Weida Hu, Xinran Wang, Junhao Chu, and Jianlu Wang*, “Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains”, Nature Electronics, 3, 43-50, (2020).

5.Yi Ding, Lan Liu, Jiayi Li, Rongrong Cao, Yu-Gang Jiang, Chunsen Liu*, Qi Liu*, and Peng Zhou*, “A semi-floating memory with 535% enhancement of refresh time by local field modulation”, Advanced Functional Materials, 30, 1908089, (2020).

6.Chunsen Liu#, Huawei Chen#, Shuiyuan Wang#, Qi Liu#, Yu-Gang Jiang, David Wei Zhang, Ming Liu, and Peng Zhou*, “Two-dimensional materials for next-generation computing technologies”, Nature Nanotechnology, 545-557, (2020). (Review)

7.Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv, and Ming Liu, “A highly CMOS compatible hafnia-based ferroelectric diode”, Nature Communications, 11, 1391, (2020).

8.Qingyu Chen, Min Lin, Zongwei Wang, Xiaolong Zhao, Yimao Cai*, Qi Liu*, Yichen Fang, Yuchao Yang, Ming He, and Ru Huang, “Low power Parylene-based memristors with a graphene barrier layer for flexible electronics applications”, Advanced Electronics Materials, 5 (9), 1800852, (2019).

9.Xiaobing Yan#*, Qianlong Zhao#, Andy Paul Chen, Jianhui Zhao, Zhenyu Zhou, Jingjuan Wang, Hong Wang, Lei Zhang, Xiaoyan Li, Zuoao Xiao, Kaiyang Wang, Cuiya Qin, Gong Wang, Yifei Pei, Hui Li, Deliang Ren, Jingsheng Chen, and Qi Liu*, “Vacancy-induced synaptic behavior in 2D WS2 Nanosheet-Based Memristor for low-power neuromorphic computing”, Small, 15(24), 1901423 (2019).

10.Huawei Chen, Chunsen Liu, Zuheng Wu, Yongli He, Zhen Wang, Heng Zhang, Qing Wan, WeidaHu, David Wei Zhang, Ming Liu, Qi Liu*, and Peng Zhou*, “Time-tailoring van der Waals heterostructures for human memory system programming”, Advanced Science, 6, 1901072, (2019).

11.Xumeng Zhang, Zhongrui Wang, Wenhao Song, Rivu Midya, Ye Zhuo, Rui Wang, Mingyi Rao, Navnidhi K. Upadhyay, Qiangfei Xia, J. Joshua Yang*, Qi Liu*, Ming Liu*, “Experimental demonstration of conversion-based SNNs with 1T1R Mott neurons for neuromorphic inference”, IEDM, 134-137 (2019).

12.Wei Wang, Rui Wang, Tuo Shi, Jinsong Wei, Rongrong Cao, Xiaolong Zhao, Zuheng Wu, Xumeng Zhang, Jian Lu, Qingjiang Li*, Qi Liu*, and Ming Liu, “A self-rectification and quasi-linear analogue memristor for artificial neural networks”, IEEE Electron Device Letters, 40, 1407-1410, (2019).

13.Rongrong cao, Bing Song, Dashan Shang, Yang Yang, Qing Luo, Shuyu Wu, Yue Li, Yan Wang*, Hangbing Lv, Qi Liu*, and Ming Liu, “Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode”, IEEE Electron Device Letters, 40, 1744-1747, (2019).

14.Xiaobing Yan#*, Jianhui Zhao#, Sen Liu, Zhenyu Zhou, Qi Liu*, Jingshen Chen, and Xiangyang Liu*, “Memristor with Ag-cluster-doped TiO2 films as artificial synapse for neuroinspired computing”, Advanced Functional Materials, 28, 170532, (2018). (Inside Front Cover)

15.Xiaolong Zhao#, Jun Ma#, Xiangheng Xiao#, Qi Liu*, Lin Shao, Di Chen, Sen Liu, Jiebin Niu, Xumeng Zhang, Yan Wang, Rongrong Cao, Wei Wang, Zengfeng Di*, Hangbing Lv, Shibing Long and Ming Liu*, “Breaking current-retention dilemma in cation-based resistive switching device graphene with controlled defects”, Advanced Materials, 30, 1705193, (2018). (Inside Back Cover)

16.Xumeng Zhang#, Wei Wang#, Qi Liu*, Xiaolong Zhao, Rongrong Cao, Zhihong Yao, Xiaoli Zhu, Feng Zhang, Hangbing Lv, Shibing Long and Ming Liu, “An artificial neuron based on a threshold switching memristor”, IEEE Electron Device Letters, 39, 308-311, (2018).

17.Rongrong Cao, Yan Wang, Shengjie Zhao, Yang Yang, Xiaolong Zhao, Wei Wang, Xumeng Zhang, Hangbing Lv, Qi Liu*, and Ming Liu, “Effects of capping electrode on ferroelectric properties of Hf0.5Zr0.5O2 thin films”, IEEE Electron Device Letters, 39, 1207-1210, (2018).

18.Xiaolong Zhao#, Sen Liu#, Jiebin Niu#, Lei Liao, Qi Liu*, Xiangheng Xiao*, Hangbing Lv, Shibing Long, Writam Banerjee, Wenqing Li, Shuyao Si, and Ming Liu*, “Confining cation injection to enhance CBRAM performance by nanopore graphene layer”, Small, 13, 1603948, (2017). (Inside Front Cover)

19.Rongrong Cao#, Sen Liu#, Qi Liu*, Xiaolong Zhao, Wei Wang, Xumeng Zhang, Facai Wu, Quantan Wu, Yan Wang, Hangbing Lv, Shibing Long, and Ming Liu, “Improvement of device reliability by introducing a BEOL-compatible TiN barrier layer in CBRAM”, IEEE Electron Device Letters, 38, 1371-1374, (2017).

20.Sen Liu#, Nianduan Lu#, Xiaolong Zhao#, Hui Xu, Writam Banerjee, Hangbing Lv, Shibing Long, Qingjiang Li, Qi Liu*, and Ming Liu*, “Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory”, Advanced Materials, 28, 10623-10629, (2016). (inside back cover)

21.Haitao Sun, Qi Liu*, Congfei Li, Shibing Long, Hangbing Lv, Chong Bi, Zongliang Huo, Ling Li and Ming Liu*, “Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology”, Advanced Functional Materials, 24, 5679-5689, (2014).

22.Qi Liu#, Jun Sun#, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Litao Sun, and Ming Liu*, “Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM,” Advanced Materials, 24, 1844-1849, (2012). (inside cover)

23.Qi Liu, Shibing Long, Hangbing Lv, Wei Wang, Jiebing Niu, Zongliang Huo, Junning Chen, and Ming Liu*, “Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode”, ACS Nano, 4, 6162-6168, (2010).