钟妮，毕业于日本国立奈良先端科学技术大学院大学，博士，华东师范大学物理与电子科学学院副研究员。

2004.9-2007.9， 博士，日本国立奈良先端科学技术大学院大学

日本国费奖学金，中国国家优秀自费留学生奖

2000.9-2003.7， 硕士，中国科学院上海硅酸盐研究所

2012.3 至今，副研究员，华东师范大学极化材料与器件教育部重点实验室

2008.4 - 2012.3，特别研究员，日本产业技术综合研究所

长期从事铁电氧化物的研究工作。2003年获中国科学院上海硅酸盐研究所硕士学位，2007年获日本奈良先端科学技术大学院大学博士学位，师从日本著名铁电物理学家塩崎忠（Shiosaki Tadashi）。近年的研究方向主要集中在氧化物薄膜和器件的制备、电学及多功能探针显微镜表征方面。目前为止，在Adv. Funct. Mater.,Phys. Rev. Mater., Nanoscale, Nanotechnology, Appl. Phys. Lett., IEEE Electr. Device L.等国际学术刊物上发表论文五十余篇（被Nat. Comm., Adv. Mater., Rep. Prog. Phys., Nano Lett., Mater. Today等引用500余次）。曾获日本文部科学省博士研究生奖学金以及2006 年国家优秀自费留学生奖学金，2013年入选上海市“浦江人才”计划。

专业英语Discipline English

微电子工艺Microelectronic Processing

新型微纳电子器件

扫描探针显微镜

科研项目

主持及参与项目

（1） 上海市浦江人才计划

铁电阻变存储效应的研究20万 主持

（2） 国家自然科学基金项目

BiFeO3外延薄膜受铁电极化调控阻变效应的研究30万 支持

（3）上海市科委创新

铁电人工突触固态器件 280万 骨干参与

（4）上海市科委创新

基于铁电效应的存算一体化和神经形态计算 400万 骨干参与

学术成果

36 Guan, Z.; Hu, H.; Shen, X.; Xiang, P.; Zhong, N.*; Chu, J.; Duan, C., Recent Progress in Two-Dimensional Ferroelectric Materials. Advanced Electronic Materials 2020, 6, 1900818.

35 Deng, X.; Zhao, Y. F.; Zhong, N.; Yue, F. Y.; Huang, R.; Peng, H.; Tang, X. D.; Xiang, P. H.*; Chu, Y. H.; Duan, C. G., Proton mediated Phase Control in Flexible and Transparent Mott Transistors. Advanced Electronic Materials 2020, 6, 1900742.

34 Bao, S.-Y.; Deng, X.; Mao, F.; Zhong, N.; Yue, F.-Y.; Sun, L.; Xiang, P.-H.*; Duan, C.-G., Ultra-flat ITO films on mica for high temperature transparent flexible electrodes. Ceramics International 2020, 46 (2), 2268-2272.

33 Yang, N.; Yuan, Y.; Guan, Z.; Zhong, N.; Chen, W. X.; Qi, R. J.; Zhang, Y. Y.; Huang, R.; Tang, X. D.; Xiang, P. H.*; Duan, C. G.; Chu, J. H., Structure dependence of ferroelectricity in high quality BiMnO3 epitaxial films. Physical Review Materials 2019, 3 (5), 054402.

32 Yang, N.; Ren, Z.-Q.; Hu, C.-Z.; Guan, Z.; Tian, B.; Zhong, N.*; Xiang, P.-H.; Duan, C.-G.; Chu, J., Ultra-wide temperature electronic synapses based on self-rectifying ferroelectric memristors. Nanotechnology 2019, 30, 464001.

31 Xu, D. D.; Deng, X.; Zhao, Y. F.; Ma, R. R.; Zhong, N.*; Huang, R.; Peng, H.; Xiang, P. H.*; Duan, C. G., Hydrogenation Dynamics of Electrically Controlled Metal-Insulator Transition in Proton gated Transparent and Flexible WO3 Transistors. Advanced Functional Materials 2019, 29, 1902497.

30 Tian, B. B.; Liu, L.; Yan, M. G.; Wang, J. L.; Zhao, Q. B.; Zhong, N.; Xiang, P. H.; Sun, L.; Peng, H.; Shen, H.; Lin, T.; Dkhi, B.; Meng, X. J.; Chu, J. H.; Tang, X. D.; Duan, C. G., A Robust Artificial Synapse Based on Organic Ferroelectric Polymer. Advanced Electronical Materials 2019, 5 (1), 1800600.

29 Ren, Z.-Q.; Liu, Y.-D.; Bao, S.-Y.; Yang, N.; Zhong, N.*; Tang, X.-D.; Xiang, P.-H.; Duan, C.-G., Probing the origins of electroresistance switching behavior in ferroelectric thin films. Applied Physics Letters 2019, 115 (24), 242901.

28 Liu, H.; Wang, C.; Han, G.; Li, J.; Peng, Y.; Liu, Y.; Wang, X.; Zhong, N.; Duan, C.; Wang, X., ZrO 2 Ferroelectric FET for Non-volatile Memory Application. IEEE Electron Device Letters 2019, 40 (9), 1419-1422.

27 Li, B.; Ren, Z.; Zhong, N.; Xie, W., Highly linear polarized photoluminescence from a rippled WSe 2 monolayer. Optics express 2019, 27 (9), 12436-12442.

26 Jiang, C.; Zhang, Y.; Tian, B.; Luo, C.; Zhong, N.; Wang, J.; Meng, X.; Peng, H.; Duan, C.-G.; Chu, J., Efficient two-terminal artificial synapse based on a network of functionalized conducting polymer nanowires. Journal of Materials Chemistry C 2019, 7 (32), 9933-9938.

25 Jia, M. X.; Ren, Z. Q.; Liu, Y. D.; Cheng, Y.; Huang, R.; Xiang, P. H.; Tang, X. D.; Tian, B. B.; Zhong, N.*; Duan, C. G., Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3 epitaxial heterostructures. Applied Physics Letters 2019, 114 (10), 102901.

24 Guan, Z.; Yang, N.; Ren, Z. Q.; Zhong, N.*; Huang, R.; Chen, W. X.; Tian, B. B.; Tang, X. D.; Xiang, P. H.*; Duan, C. G.; Chu, J. H., Mediation in the second-order synaptic emulator with conductive atomic force microscopy. Nanoscale 2019, 11 (18), 8744-8751.

23 Xiang, P.-H.; Zhong, N.#; Sun, L.; Tang, X.; Duan, C.-G., Tailoring colossal magnetoresistance and magnetoresistive memory effect by two-dimension-like phase competition in electron-doped manganite superlattices. Journal of Physics D: Applied Physics 2018, 51, 275304.

22 Shen, P.; Guan, Z.; Zhong, N.; Xiang, P. H.; Wang, R. B.; Bao, Q. Y.; Yang, P. X.; Sun, L.; Duan, C. G.; Chu, J. H., Leakage mechanisms of double-perovskite Bi2FeMnO6 epitaxial thin films. Journal of Physics D-Applied Physics 2018, 51 (4), 045304.

21 Huang, X.; Jiang, K. A.; Niu, Y. R.; Wang, R. Z.; Zheng, D. Y.; Dong, A. H.; Dong, X. Y.; Mei, C. L.; Lu, J.; Liu, S.; Gan, Z. K.; Zhong, N.; Wang, H., Configurable ultra-low operating voltage resistive switching between bipolar and threshold behaviors for Ag/TaOx/Pt structures. Applied Physics Letters 2018, 113 (11), 112103.

20 Wang, Y. Q.; Song, Y. X.; Tong, W. Y.; Zhang, Y. Y.; Qi, R. J.; Xiang, P. H.; Huang, R.; Zhong, N.; Lin, H. C.; Tang, X. D.; Peng, H.; Duan, C. G., Electric field control of magnetism in nickel with coaxial cylinder structure at room temperature by electric double layergating. Journal of Materials Chemistry C 2017, 5 (40), 10609-10614.

19 Wang, Y. Q.; Fang, M. J.; Tian, B. B.; Xiang, P. H.; Zhong, N.; Lin, H. C.; Luo, C. H.; Peng, H.; Duan, C. G., Transparent PVDF-TrFE/Graphene Oxide Ultrathin Films with Enhanced Energy Harvesting Performance. Chemistryselect 2017, 2 (26), 7951-7955.

18 Wang, J. W.; Luo, Q. Q.; Luo, C. H.; Lin, H. C.; Qi, R. J.; Zhong, N.; Peng, H., High-performance supercapacitor electrode based on a nanocomposite of polyaniline and chemically exfoliated MoS2 nanosheets. Journal of Solid State Electrochemistry 2017, 21 (7), 2071-2077.

17 Jiang, Z.-Z.; Guan, Z.; Yang, N.; Xiang, P.-H.*; Qi, R.-J.; Huang, R.; Yang, P.-X.; Zhong, N.*; Duan, C.-G., Epitaxial growth of BiFeO3 films on SrRuO3/SrTiO3. Materials Characterization 2017, 131, 217-223.

16 Jiang, C. L.; Zhong, N.; Luo, C. H.; Lin, H. C.; Zhang, Y. Y.; Peng, H.; Duan, C. G., (Diisopropylammonium)(2)MnBr4: a multifunctional ferroelectric with efficient green-emission and excellent gas sensing properties. Chemical Communications 2017, 53 (44), 5954-5957.

15 Guan, Z.; Jiang, Z.-Z.; Tian, B.-B.; Zhu, Y.-P.; Xiang, P.-H.*; Zhong, N.*; Duan, C.-G.; Chu, J.-H., Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy. AIP Advances 2017, 7 (9), 095116.

14 Chen, B.-J.; Yang, N.; Zhong*, N.; Tang, X.-D.; Yang, P.-X.; Xiang*, P.-H.; Duan, C.-G., Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition. Materials Letters 2017, 202, 96–98.

13 Chen, B. J.; Sun, Y.; Yang, N.; Zhong, N.*; Zhang, Y. Y.; Bai, W.; Sun, L.; Tang, X. D.; Yang, P. X.; Xiang, P. H.*; Duan, C. G., Electronic phase diagram of oxygen-deficient SmNiO3-d epitaxial thin films. Journal of Physics D-Applied Physics 2017, 50 (23), 235302.

12 Zhang, Y.; Dong, W.; Qi, R.; Huang, R.; Yang, J.; Bai, W.; Zhong, N.; Chen, Y.; Wang, G.; Dong, X.; Technology, Large room-temperature magnetoresistance in epitaxial La 0.7 Ca 0.25 Sr 0.05 MnO 3 thin films prepared by sol-gel method. Journal of Sol-Gel Science Technology2017, 78(3), 576.

11 Sun, Y.; Zhong, N.*; Zhang, Y. Y.; Qi, R. J.; Huang, R.; Tang, X. D.; Yang, P. X.; Xiang, P. H.; Duan, C. G., Structure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure. Journal of Applied Physics 2016, 120 (23), 235108.

10 Zhong, N.#; Xiang, P. H.; Zhang, Y. Y.; Wu, X.; Tang, X. D.; Yang, P. X.; Duan, C. G.; Chu, J. H., Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films. Journal of Applied Physics 2015, 118 (10), 104102.

9 Xiang, P. H.*; Zhong, N.#; Duan, C. G.; Tang, X. D.; Hu, Z. G.; Yang, P. X.; Zhu, Z. Q.; Chu, J. H., Strain controlled metal-insulator transition in epitaxial NdNiO3 thin films. Journal of Applied Physics 2013, 114 (24), 243713.

8 Zhong, N.; Cao, J. J.; Shima, H.; Akinaga, H., Effect of Annealing Temperature on TiO2-Based Thin-Film-Transistor Performance. IEEE Electron Device Letters 2012, 33 (7), 1009-1011.

7 Zhong, N.; Shima, H.; Akinaga, H., Improvement of Rectifying Property in Pt/TiOx/Pt by Controlling Oxidization of TiOx Layer. Japanese Journal of Applied Physics 2011, 50 (4), 04DH04.

6 Zhong, N.; Shima, H.; Akinaga, H., Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator (vol 1, 032167, 2011). AIP Advances 2011, 1 (4), 032167.

5 Zhong, N.; Shima, H.; Akinaga, H. J. A. P. L., Rectifying characteristic of Pt/TiO x/metal/Pt controlled by electronegativity. Applied Physics Letters 2010, 96 (4), 042107.

4 Zhong, N.; Shima, H.; Akinaga, H., Transient Current Study on Pt/TiO2-x/Pt Capacitor. Japanese Journal of Applied Physics 2010, 49 (4), 04DJ15.

3 Zhong, N.; Shima, H.; Akinaga, H., Switchable Pt/TiO2-x/Pt Schottky Diodes. Japanese Journal of Applied Physics 2009, 48 (5), 05DF03.

2 Zhong, N.; Shiosaki, T., Dielectric behavior of Bi3.25La0.75Ti3O12 ferroelectric film. Journal of Applied Physics 2006, 100 (3), 034107

1 Zhong, N.; Okamura, S.; Uchiyama, K.; Shiosaki, T., Single-ionized-oxygen-vacancy-related dielectric relaxation in Bi3.25La0.75Ti3O12 ferroelectric films.

2013年入选上海市“浦江人才”计划

2006年国家优秀自费留学生奖学金

日本文部科学省博士研究生奖学金