成岩，女，华东师范大学电子科学系硕士生导师，专业方向是非易失存储材料与器件等。
研究方向
纳米材料与器件的原子分辨率结构表征
原位外场（热、电、力）下材料的结构转变
学术成果
1.Y.H. Zheng, Y. Wang, T.J. Xin, Y. Cheng* (corresponding author), R. Huang, P. Liu, M. Luo, Z.L. Zhang, S.L. Lv, Z.T. Song and S.L. Feng. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5. Communication Chemistry, 2019.
2.K. Ren, Y. Cheng* (corresponding author), M.J. Xia, S.L. Lv and Z.T. Song. In-situ observation of Ge2Sb2Te5 crystallization at the passivated interface. Ceramics International.
3.W.X. Zhang, H. Song, Y. Cheng, C. Liu, C.H. Wang, M.A.N. Khan, H. Zhang, J.Z. Liu, C.Z. Yu*, L.J. Wang, and J.S. Li*. Core–Shell Prussian Blue Analogs with Compositional Heterogeneity and Open Cages for Oxygen Evolution Reaction.Advanced Science.
4.Y. Wang, T.Q. Guo, G.Y. Liu, T. Li, S.L. Lv, S.N. Song, Y. Cheng, W.X. Song, K. Ren and Z.T. Song. Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power-Consumption. ACS Applied Materials & Interfaces
5.Y. Wang, T.B. Wang, G.Y. Liu, T.Q. Guo, T. Li, S.L. Lv, Y. Cheng, S.N. Song, K. Ren and Z.T. Song. High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping. Scripta Materialia, 2019
6.M.X. Jia, Z.Q. Ren, Y.D. Liu, Y. Cheng, R. Huang, P.H. Xiang, X.D. Tang, B.B. Tian, N. Zhong and C.G. Duan. Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3 epitaxial heterostructures. Applied Physics Letters, 2019
7.X. Chen, Y.H. Zheng, M. Zhu, K. Ren, Y. Wang, T. Li, G.Y. Liu, T.Q. Guo, L. Wu, X.Q. Liu, Y. Cheng* (corresponding author) and Z.T. Song. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application. Scientific Reports, 2018
8.Q. Luo, T.C. Gong, Y. Cheng, Q.Z. Zhang, H.R. Yu, J. Yu, H.B. Lv*, H.L. Ma, X.X. Xu, K.L. Huang, X. Zhu, D.N. Dong, J.H. Yin, P. Yuan, L. Tai, J.F. Gao, J.F. Li, H.X. Yin, S.B. Long, Q. Liu, M. Liu*, Coexistence of Charge Trapping and Domain Switching in 14nm FE-FinFET for 1T DRAM and Embedded Non-volatile Memory Application. IEEE International Electron Devices Meeting (IEDM), 2018.
9.C. Li, H.L. Song, Y.W. Shen, Y.F. Wang, Y. Cheng, R.J. Qi, S.Y. Chen, C.G. Duan and R. Huang.Evolution of cation ordering and crystal defects controlled by Zn substitutions in Cu2SnS3 ceramics, AIP Advances, 2018
10.C. Li, Y.W. Shen, H.L. Song, Y.F. Wang, S.Y. Chen, R.J. Qi, Y. Cheng, C.G. Duan and R. Huang. Microstructure of Cu2S nanoprecipitates and its effect on electrical and thermal properties in thermoelectric Cu2Zn0.2Sn0.8S3 ceramics. AIP Advances, 2018
11.Y. Wang, Y.H. Zheng, G.Y. Liu, T. Li, T.Q. Guo, Y. Cheng, S.L. Lv, S.N. Song, K. Ren*, Z.T. Song*, Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory. Applied Physics Letters, 2018
12.Y. Wang, T.B. Wang, Y.H. Zheng, G.Y. Liu, T. Li, S.L. Lv, W.X. Song, S.N. Song, Y. Cheng, K. Ren*, Z.T. Song, Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application. Scientific Reports, 2018
13.Y.H. Zheng, Y. Cheng* (corresponding author), R. Huang, R.J. Qi, F. Rao*, K.Y. Ding, W.J. Yin, S.S. Song, W.L. Liu, Z.T. Song and S.L. Feng. Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film. Scientific Reports, 2017
14.K. Ren, Y. Cheng* (corresponding author), X. Chen, K.Y. Ding, S.L. Lv, W.J. Yin, X.H. Guo, Z.G. Ji and Z.T. Song*. Carbon layer application in phase change memory to reduce power consumption and atomic migration. Materials Letters, 2017
15.Y.H. Zheng, M.J. Xia, Y. Cheng* (corresponding author), F. Rao*, K.Y. Ding, W.L. Liu, J. Yu, Z.T. Song and S.L. Feng. Direct observation of metastable face-centered cubic Sb2Te3 crystal. Nano Research, 2016
16.K.Y. Ding,F. Rao*, S.L. Lv, Y. Cheng, W.L. Liu and Z.T. Song. Low-energy amorphization of Ti1Sb2Te5 phase change alloy induced by TiTe2 nano-lamellae. Scientific Reports, 2016
17.Y.H. Zheng, Y. Cheng* (corresponding author), M. Zhu, X.L. Ji, Q. Wang, S.N. Song, Z.T. Song, W.L. Liu and S.L. Feng. A candidate Zr-doped Sb2Te alloy for phase change memory application. Apply Physics Letters, 2016
18.Y.H. Zheng, Y. Cheng* (corresponding author), Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song and S.L. Feng. Self-precipitated process of Te nanowire from Zr-doped Sb2Te3 film. Materials Science Forum, 2016
19.F. Rao, Z.T. Song, Y. Cheng, X.S. Liu, M.J. Xia, W. Li, K.Y. Ding, X.F. Feng, M. Zhu and S.L. Feng, Direct observation of titanium-centered octahedral in titanium–antimony–tellurium phase-change material. Nature communications, 2015
20.M. Zhu, M.J. Xia, Z.T. Song, Y. Cheng, L.C. Wu, F. Rao, S.N. Song, M. Wang, Y.G. Lv and S.L. Feng, Understanding the crystallization behavior of as-deposited Ti–Sb–Te alloys through real-time radial distribution functions. Nanoscale, 2015
21.M.J. Xia, M. Zhu, Y.C. Wang, Z.T. Song, F. Rao, L.C. Wu, Y. Cheng and S.N. Song, Ti−Sb−Te alloy: a candidate for fast and long-life phase-change memory. ACS Applied Materials & Interfaces, 2015
22.Y. Cheng, S.N. Song, Z.H. Zhang, Z.T. Song, B. Liu, S.L. Feng and Z. Zhang, Electron beam annealing for component optimization in Si-Sb-Te material. Materials Science Forum, 2015
23.L. Li, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, S.L. Lv, L.C. Wu, B. Liu and S.L. Feng, Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high data-retention phase change random access memory applications. Applied Physics A, 2015
24.L.L. Shen, S.N. Song, Z.H. Zhang, Z.T. Song, Y. Cheng, Y.Q. Zhu, X.H. Guo, W.J. Yin, D.N. Yao, B. Liu and S.L. Feng, Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas. Thin Solid Films, 2015
25.L. Li, S.N. Song, Z.H. Zhang, Y.Q. Zhu, Z.T. Song, Y. Cheng, S.L. Lv, B. Liu and L.L. Chen, Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices. Thin Solid Films, 2015
26.Q. wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, Q. Zhang, S.N. Song, Y. Cheng and Z.T. Song, Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory. Applied Physics Letters, 2015
27.Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, R.R. Huo, M. Zhu, S.N. Song, S.L. Lv, Y. Cheng, Z.T. Song and S.L. Feng, Characterization of Cr-doped Sb2Te3 films and their application to phase-change memory. physica status solidi (RRL) - Rapid Research Letters, 2015
28.S.N. Song, D.N. Yao, Z.T. Song, L.N. Gao, Z.H. Zhang, L. Li, L.L. Shen, L.C. Wu, B. Liu, Y. Cheng and S.L. Feng, Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon. Nanoscale Research Letters, 2015
29.Y.C. Wang, X.G. Chen, Y. Cheng, X.L. Zhou, S.L. Lv, Y.F. Chen, Y.Q. Wang, M. Zhou, H.P. Chen, Y.Y. Zhang, Z.T. Song and G.M. Feng, RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming. IEEE Electron Device Letters, 2014
30.Y.C. Wang, Y.F. Chen, D.L. Cai, Y. Cheng, X.G. Chen, Y.Q. Wang, M.J. Xia, M. Zhou, G.Z. Li, Y.Y. Zhang, D. Gao, Z.T. Song and G.M. Feng, Understanding the early cycling evolution behaviors for phase change memory application. Journal of Applied Physics, 2014
31.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, C. Peng, L. Zhang, D.C. Cao, X.H. Guo, W.J. Yin, L.C. Wu and B. Liu, Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas. Microelectronic Engineering, 2014
32.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, M. Zhu, X.Y. Li, Y.Q. Zhu, X.H. Guo, W.J. Yin, L.C. Wu, B. Liu, S.L. Feng and D. Zhou, Etching of new phase change material Ti0.5Sb2Te3 by Cl2/Ar and CF4/Ar inductively coupled plasmas. Applied Surface Science, 2014
33.Z.H. Zhang, Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, B. Liu, Y.Q. Zhu, D. Zhou and S.L. Feng, Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application. Journal of Applied Physics, 2014
34.Y. Cheng, Y.F. Gu, Z.T. Song, S.N. Song, F. Rao, L.C. Wu, B. Liu and S.L. Feng, Investigation of Sb-rich Sb-Te binary films used as phase change material. In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013
35.Y.G. Lu, S.N. Song, Z.T. Song, Y. Cheng, L.C. Wu and B. Liu, Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application, In 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, Proceedings of SPIE, 2013
36.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, F. Rao, L.C. Wu, B. Liu, B. Chen and Y.G. Lu, Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. Apply Physics Letters, 2013
37.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu and B. Chen, Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material. Apply Physics Letters, 2013
38.Y.F. Gu, S.N. Song, Z.T. Song, B.S. Yuan, Y. Cheng, Z.H. Zhang, B. Liu and S.L. Feng, Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory, Apply Physics Letters, 2013
39.C. Peng, L.C. Wu, F. Rao, Z.T. Song, S.L. Lv, X.L. Zhou, X.F. Du, Y. Cheng, P.X. Yang and J.H. Chu, A simple method used to evaluate phase-change materials based on focused-ion beam technique. Apply Physics Letters, 2013
40.X.L. Zhou, L.C. Wu, Z.T. Song, Y. Cheng, F. Rao, K. Ren, S.N. Song, B. Liu and S.L. Feng, Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory. Acta Materialia, 2013
41.M. Zhu, L.C. Wu, F. Rao, Z.T. Song, X.L. Ji, D.N. Yao, Y. Cheng, S.L. Lv, S.N. Song, B. Liu and L. Xu, The effect of Titanium doping on the structure and phase change characteristics of Sb4Te. Journal of Applied Physics, 2013
42.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.Y. Liu, X.F. Du, B. Liu and S.L. Feng, Reactive ion etching of SixSb2Te in CF4/Ar plasma for nonvolatile phase-change memory device. Journal of Nanoscience and Nanotechnology, 2013
43.Z.H. Zhang, S.N. Song, Z.T. Song, Y. Cheng, Y.F. Gu, L.C. Wu, B. Liu and S.L. Feng, Study on GeGaSbTe film for long data retention phase change memory application. Journal of Non Crystalline Solids, 2013
44.N. Yan, Y. Cheng, X.Q. Liu, Z.T. Song and Z. Zhang, In situ transmission electron microscopy investigation of SixSb100-x phase-change materials. Materials Letters, 2012
45.F. Rao, Z.T. Song, Y. Cheng, M.J. Xia, K. Ren, L.C. Wu, B. Liu and S.L. Feng, Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials. Acta Materialia, 2012
46.K. Ren, F. Rao, Z.T. Song, S.L. Lv, Y. Cheng, L.C. Wu, C. Peng, X.L. Zhou, M.J. Xia, B. Liu and S.L. Feng, Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application. Apply Physics Letters, 2012
47.Y.F. Gu, S.N. Song, Z.T. Song, Y. Cheng, X.F. Du, B. Liu and S.L. Feng, SixSb2Te materials with stable phase for phase change random access memory applications. Journal of Applied Physics, 2012
48.L. Zhang, L.X. Gu, X.D. Han, H. Huang, Y.N. Dai, Y. Cheng, Y. Wang, Z. Zhang, Y.Q. Wu, B. Liu and Z.T. Song, The influence of sputtering power on phase-change films. Electrochemical and Solid-State Letters, 2012
49.Y.G. Lu, S.N. Song, Z.T. Song, W.C Ren, Y.L. Xiong, F. Rao, L.C. Wu, Y. Cheng, Bo. Liu, Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory. Scripta Materialia, 2012
50.X. Zhang, F. Rao, B. Liu, C. Peng, X.L. Zhou, D.N. Yao, X.H. Guo, S.N Song, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, Z.T. Song and S.L. Feng. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma, Journal of Semiconductors, 2012
51.X. Zhang, B. Liu, C. Peng, F. Rao, X.L. Zhou, S.N. Song, L.Y. Wang, Y. Cheng, L.C. Wu, D.N. Yao, Z.T. Song and S.L. Feng. Study on Germanium Nitride as a buffer layer for phase change memory, Chinese Physics Letters, 2012
52.Y. Cheng, Z.T. Song, Y.F. Gu, S.N. Song, F. Rao, L.C. Wu, B. Liu and S.L Feng, Influence of silicon on the thermally induced crystallization process of Si-Sb4Te phase change materials. Apply Physics Letters, 2011
53.X.L. Zhou, L.C. Wu, Z.T. Song, F. Rao, Y. Cheng, C. Peng, D.N. Yao, S.N. Song, B. Liu, S.L. Feng and B. Chen, Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state. Apply Physics Letters, 2011
54.F. Rao, Z.T. Song, K. Ren, X.L. Zhou, Y. Cheng, L.C. Wu and B. Liu, Si-Sb-Te materials for phase change memory applications. Nanotechnology, 2011
55.T. Zhang, Z.T. Song, Y.F. Gu, Y. Cheng, B. Liu and S.L. Feng, Mechanism of oxidation on Si2Sb2Te5 phase change material and its application. Japanese Journal of Applied Physics, 2011
56.Y.F. Gu, Y. Cheng, S.N. Song, T. Zhang, Z.T. Song, Y.X. Liu, X.F. Du, B. Liu and S.L Feng, Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory. Scripta Materialia, 2011
57.K. Ren, F. Rao, Z.T. Song, Y. Cheng, L.C. Wu, X.L. Zhou, Y.F. Gong, M.J. Xia, B. Liu and S.L. Feng, Study on the crystallization behaviors of Si2Sb2Tex materials. Scripta Materialia, 2011
58.L.C. Wu, X.L. Zhou, Z.T. Song, M. Zhu, Y. Cheng, F. Rao, S.N. Song, B. Liu and S.L. Feng, Sb-rich Si-Sb-Te phase-change material for phase-change random access memory applications, IEEE Transactions on Electron Devices. 2011.
59.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, Y. Cheng and B. Liu, Crystallization process of amorphous GaSb5Te4 film for high-speed phase change memory. Applied Physics Express, 2011
60.Y.G. Lu, S.N. Song, Z.T. Song, W.C. Ren, C. Peng, Y. Cheng and B. Liu, Investigation of HfO2 doping on GeTe for phase change memory. Solid State Sciences, 2011.
61.Y. Cheng, N. Yan, X.D. Han, Z. Zhang, T. Zhang, Z.T. Song, B. Liu and S.L. Feng, Thermally induced phase separation of Si-Sb-Te alloy. Journal of Non-Crystalline Solids, 2010
62.Y. Cheng, X.D. Han, X.Q. Liu, K. Zheng, Z. Zhang, T. Zhang, Z.T. Song, B. Liu and S.L Feng. Self- extrusion of Te-nanowire from Si-Sb-Te thin films. Apply Physics Letters, 2008
63.T. Zhang, Y. Cheng, Z.T. Song, B. Liu, S.L Feng, X.D. Han, Z. Zhang and B. Chen. Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process. Scripta Materialia, 2008